DMN61D8L /lvt document number: ds 37630 rev. 3 - 2 1 of 9 www.diodes.com april 2015 ? diodes incorporated DMN61D8L/lvt new product advanced information advanced information product summary v (br)dss r ds(on) max i d max t a = + 25 c 6 0v 1.8 ? @ v gs = 5 v 470 m a 2.4 ? @ v gs = 3 v description and applications DMN61D8L/lvt p rovides a single component solution for switching inductive loads such as relays, solenoids, and small dc moto rs in a utomotive applications, without the need of a freewheeling diode. DMN61D8L/lvt accepts logic level inputs, t hus allowing it to be driven by logic gates, inverters, and microcontrollers. it is ideally suited for d oor s , window s , and a ntenna r elay coils. features and benefits ? provides a more reliable and robust interface between sensitive logic and dc relay coils. ? replaces 3 - 4 discrete components enabling pcb footprint to be reduced . ? internal active clamp remo ves the need for external zener diod e . ? totally lead - free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. green device (note 3) ? qualified to aec - q101 standards for high reliability mechanical data case: sot23 ? case material: molded plastic, green molding compound ; ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminals: finish C matte tin a nnealed over alloy 42 l eadframe . (lead - free plating). solderable per mil - std - 202, method 208 ? terminal connections: see diagram ? weight: 0.008 grams ( a pproximate) case: tsot26 ? case material: molded plastic, green molding compound ; ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminals connections: see diagram ? terminals: finish C matte tin a nnealed over copper l eadframe . solderable per mil - std - 202, method 208 ? weight: 0.013 grams (a pproximate) ordering information (note 4 ) part number case packaging DMN61D8L - 7 sot 2 3 3 , 000/tape & reel DMN61D8L - 13 sot 2 3 10 , 0 00/tape & reel DMN61D8Lvt - 7 tsot2 6 3 , 000/tape & reel DMN61D8Lvt - 13 tsot2 6 10 , 0 00/tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm tota l br + cl) and <1000ppm antimony compounds. 4. for packaging det ails, go to our website at http://www.diodes.com/products/packages.html . top view esd protected equivalent circuit top view internal schematic sot - 2 3 view tsot26 d g s
DMN61D8L /lvt document number: ds 37630 rev. 3 - 2 2 of 9 www.diodes.com april 2015 ? diodes incorporated DMN61D8L/lvt new product advanced information advanced information marking information date code key year 2014 2015 2016 2017 201 8 201 9 20 20 code b c d e f g h month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value units drain - source voltage v dss 60 v gate - source voltage v gss 12 v continuous drain current (note 6 ) sot23 steady state t a = + 25 c t a = + 70 c i d 470 370 m a continuous drain current (note 6 ) tsot26 steady state t a = +25c t a = + 70 c i d 630 500 m a maximum continuous body diode forward current (note 6 ) i s 0.5 a single pulse drain - to - source avalanche energy ( f or r elay c oils/ i nductive l oads of 80 or higher ) (t j i nitial = + 85 c) e z 200 mj peak power dissipation, drain - to - source ( n on - repetitive current square pulse 1.0 ms duration) (t j i nitial = + 85c) p pk 20 w load dump pulse, drain - to - source , r source = 0.5, t = 300 ms) j initial = + 85c) e ld1 60 v inductive switching transient 1, drain - to - source (waveform: r source = 10, t = 2.0 ms) j initial = + 85c) e ld2 100 v inductive switching transient 2, drain - to - source (waveform: r source = 4.0, t = 50 j initial = + 85c) e ld3 300 v reverse battery, 10 minutes (drain - to - source) ( for relay coils/inductive loads of 80 rev?bat dual voltage jump start, 10 minutes (drain - to - source) dual?volt esd human body model (hbm) esd 4 , 000 v 1d8 = product type marking code ym = date code marking y or y? = year (ex: c = 20 1 5 ) m = month (ex: 9 = september) sot23 tsot26 1d8 y m 1d8 ym 1d8 ym
DMN61D8L /lvt document number: ds 37630 rev. 3 - 2 3 of 9 www.diodes.com april 2015 ? diodes incorporated DMN61D8L/lvt new product advanced information advanced information thermal characteristics (sot23) (@ t a = +25c, unless otherwise specified.) characteristic symbol value units total power dissipation (note 5 ) p d 390 m w thermal resistance, junction to ambient (note 5 ) s teady state r ja 321 c /w total power dissipation (note 6 ) p d 610 m w thermal resistance, junction to ambient (note 6 ) s teady state r ja 208 c/w operating and storage temperature range t j, t stg - 55 to + 15 0 c thermal characteristics (tsot26) (@ t a = +25c, unless otherwise specified.) characteristic symbol value units total power dissipation (note 5 ) p d 820 m w thermal resistance, junction to ambient (note 5 ) s teady state r ja 154 c/w total power dissipation (note 6 ) p d 1090 m w thermal resistance, junction to ambient (note 6 ) s teady state r ja 116 c/w operating and storage temperature range t j, t stg - 55 to + 150 c electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7 ) drain - source breakdown voltage bv dss 60 ? ? gs = 0v, i d = 10 m a zero gate voltage drain current i dss ? ? ds = 60v, v gs = 0v v ds = 12 v, v gs = 0v gate - source leakage i gss ? ? gs = 5 v, v ds = 0v v gs = 3 v, v ds = 0v on characteristics (note 7 ) gate threshold voltage v gs(th) 1. 3 ? ds = v gs , i d = 1m a static drain - source on - resistance r ds(on) ? gs = 5 v, i d = 0. 15 a v gs = 3 v, i d = 0. 15 a forward transfer admittance |y fs | 80 ? ? ds = 1 2 v , i d = 0. 15 a diode forward voltage v sd ? ? ? ? gs = 0v, i s = 0. 1 5 a dynamic characteristics (note 8 ) input capacitance c iss ? ? ds = 12 v, v gs = 0v f = 1.0mhz output capacitance c oss ? ? rss ? ? g ? ? gs = 5 v, v ds = 12 v, i d = 150 m a gate - source charge q gs ? ? gd ? ? d(on) ? ? dd = 12 v, v gs = 5v. turn - on rise time t r ? ? d(off) ? ? f ? ? notes: 5 . device mounted on fr - 4 pcb, with minimum recommended pad layout . 6 . device mounted on 1 x 1 fr - 4 pcb with high coverage 2oz. c opper, single sided . 7 . short duration pulse test used to minimize self - heating effect. 8 . guarante e d by design. not subject to product testing .
DMN61D8L /lvt document number: ds 37630 rev. 3 - 2 4 of 9 www.diodes.com april 2015 ? diodes incorporated DMN61D8L/lvt new product advanced information advanced information v , drain-source voltage (v) ds figure 1 typical output characteristic i , d r a i n c u r r e n t ( a ) d 0 0.2 0.4 0.6 0.8 1 0 1 2 3 4 5 v = 1.8v gs v = 2.0v gs v = 2.5v gs v = 3.0v gs v = 4.0v gs v = 4.5v gs v = 5.0v gs v = 10v gs v , gate-source voltage (v) gs figure 2 typical transfer characteristics i , d r a i n c u r r e n t ( a ) d t = 85c a 0 0.2 0.4 0.6 0.8 1 1 1.5 2 2.5 3 3.5 t = -55c a t = 25c a t = 125c a t = 150c a v = 5.0v ds i , drain-source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 v = 3v gs v = 5v gs v , gate-source voltage (v) gs figure 4 typical transfer characteristic r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 1 2 3 4 5 0 2 4 6 8 10 12 i = 150ma d i , drain current (a) d figure 5 typical on-resistance vs. drain current and temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.5 1 1.5 2 2.5 3 0 0.2 0.4 0.6 0.8 1 v = 5v gs t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a t , junction temperature ( c) j ? figure 6 on-resistance variation with temperature r , d r a i n - s o u r c e d s ( o n ) o n - r e s i s t a n c e ( n o r m a l i z e d ) 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -50 -25 0 25 50 75 100 125 150 v = 3v gs i = 150ma d v = 5v gs i = 150ma d
DMN61D8L /lvt document number: ds 37630 rev. 3 - 2 5 of 9 www.diodes.com april 2015 ? diodes incorporated DMN61D8L/lvt new product advanced information advanced information t , junction temperature ( c) j ? figure 7 on-resistance variation with temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.5 1 1.5 2 2.5 3 -50 -25 0 25 50 75 100 125 150 v = 5v gs i = 150ma d v = 3v gs i = 150ma d t , junction temperature ( c) j ? figure 8 gate threshold variation vs. ambient temperature v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 -50 -25 0 25 50 75 100 125 150 i = 1ma d i = 250a d v , source-drain voltage (v) sd figure 9 diode forward voltage vs. current i , s o u r c e c u r r e n t ( a ) s 0 0.2 0.4 0.6 0.8 1 0 0.3 0.6 0.9 1.2 1.5 t = -55c a t = 150c a t = 25c a t = 85c a t = 125c a v , drain-source voltage (v) ds figure 10 typical junction capacitance c , j u n c t i o n c a p a c i t a n c e ( p f ) t 0 1 10 100 0 5 10 15 20 25 30 35 40 f = 1mhz c rss c oss c iss q , total gate charge (nc) g figure 11 gate charge v g a t e t h r e s h o l d v o l t a g e ( v ) g s 0 1 2 3 4 5 6 7 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v = 12v ds i = 150ma d
DMN61D8L /lvt document number: ds 37630 rev. 3 - 2 6 of 9 www.diodes.com april 2015 ? diodes incorporated DMN61D8L/lvt new product advanced information advanced information sot23 : tsot26 : t1, pulse duration time (sec) figure 12 transient thermal resistance r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 r (t) = r(t) * r thja thja r = 323c/w ? ja duty cycle, d = t1/ t2 d = single pulse d = 0.005 d = 0.9 d = 0.7 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 d = 0.5 d = 0.7 d = 0.005 r (t) = r(t) * r thja thja r = 154c/w ? ja duty cycle, d = t1/ t2 d = single pulse d = 0.01 d = 0.02 d = 0.05 d = 0.1 d = 0.3 d = 0.9 t1, pulse duration time (sec) figure 13 transient thermal resistance r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e
DMN61D8L /lvt document number: ds 37630 rev. 3 - 2 7 of 9 www.diodes.com april 2015 ? diodes incorporated DMN61D8L/lvt new product advanced information advanced information package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. sot23 sot23 dim min max typ a 0.37 0.51 0.40 b 1.20 1.40 1.30 c 2.30 2.50 2.40 d 0.89 1.03 0.915 f 0.45 0.60 0.535 g 1.78 2.05 1.83 h 2.80 3.00 2.90 j 0.013 0.10 0.05 k 0. 890 1. 0 0 0.975 k1 0.903 1.10 1.0 25 l 0.45 0.61 0.55 l 1 0. 2 5 0. 55 0. 40 m 0.085 0.1 50 0.11 0 ? ? all dimensions in mm tsot26 tsot26 dim min max typ a ? ? ? a1 0.01 0.10 ? a2 0.84 0.90 ? d ? ? e ? ? e1 ? ? b 0.30 0.45 ? c 0.12 0.20 ? e ? ? e1 ? ? l 0.30 0.50 l2 ? ? 0 8 4 1 4 12 ? all dimensions in mm j k1 k l1 gauge plane 0.25 h l m all 7 a c b d g f a c a1 l e1 e a2 d e1 e 6x b ? 4x 1 ?? l2 a
DMN61D8L /lvt document number: ds 37630 rev. 3 - 2 8 of 9 www.diodes.com april 2015 ? diodes incorporated DMN61D8L/lvt new product advanced information advanced information suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. sot23 tsot26 dimensions value (in mm) z 2.9 x 0.8 y 0.9 c 2.0 e 1.35 dimensions value (in mm) c 0.950 x 0.700 y 1.000 y1 3.199 x e y c z y1 c c x (6x) y (6x)
DMN61D8L /lvt document number: ds 37630 rev. 3 - 2 9 of 9 www.diodes.com april 2015 ? diodes incorporated DMN61D8L/lvt new product advanced information advanced information important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any lia bility arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or pro ducts described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorpora ted does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales chann el. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall i ndemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized ap plication. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or foreign trademarks. th is document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiven ess. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related re quirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 5 , diodes incorporated www.diodes.com
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